EE451:

Electronic Properties of Semiconductors

Description:

Develops an understanding of those semiconductor parameters that relate to the performance of semiconductor devices. Hole and electron conduction and charge carrier distribution as a function of energy are developed. Charge carrier generation and recombination and carrier dynamics leading to drift and diffusion are used to study semiconductor transport phenomena. The p-n junction, bipolar junction transistor and field-effect transisitor are studied in detail. (3-0-3).  Prereq: SP212 or SP222 or permission of chair. [Spring]

Section:

Schedule

Room

Instructor

4001

Lecture

TBA

MU-321

Assoc. Prof. Firebaugh

Course Materials:

The syllabus with links to problem sets and solutions

A list of  course objectives

 .pdf files require Adobe Acrobat® Reader™ available from USNA IRC or Adobe sites.