Characterization of Vertical Gallium Nitride Schottky Diodes
Midshipman Researcher(s): 1/C Nathaniel O'Neal
Adviser(s): CDR Chris Martino
Poster #39
The objective of this research is to improve the manufacturing process of Vertical Gallium Nitride Schottky Diodes in order to realize significant benefits to Navy pulse power weapons systems and power distribution. While GaN devices have appreciably higher voltage blocking potential than comparable silicon devices, they are not currently in high power circuit design due to the youth of the manufacturing processes. One area in which maturity can be pursued is the high rate of failure of Schottky contacts. It is the intent of this research project to characterize devices manufactured with alternative methods that will make them more reliable.
